Test and Reliability of Magnetic Random Access Memories
نویسندگان
چکیده
Magnetic Random Access Memories (MRAMs) are “Spintronics” devices that store data in Magnetic Tunnel Junctions (MTJs) and have high data processing speed, low power consumption and high integration density compared with FLASH memories. Also, MRAM offers relative large Tunnel Magneto Resistance (TMR) at room temperature and it is compatible with Complementary Metal Oxide Semiconductor (CMOS) process fabrication. These memories, when compared with Static Random Access Memories (SRAMs), also have reasonable processing speed and power consumption. Table 1 [3] summarizes main characteristics of SRAM, MRAM and FLASH technologies respectively.
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